Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer

摘要

Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1580℃,100 mbar with rotation based on horizontal low-pressure hot-wall CVD (LP-HW-CVD) system to get high quality 4H-SiC epilayers. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with SEM, AFM, XRD and C-V measurement. By testing, the 4H-SiC epitaxial layer has a good crystalline structure and mirror-like surface with few surface defects. N type 4H-SiC epilayers are obtained by in-situ doping of N2. The Uniformity of doping concentration have been tested below 5%.