首页>
外国专利>
Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer
Schottky Barrier Detection Devices Having a 4H-SiC n-Type Epitaxial Layer
展开▼
机译:具有4H-SiC n型外延层的肖特基势垒检测器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.
展开▼
机译:提供了一种检测装置及其制造和使用方法。所述检测装置可以包括:SiC衬底,其限定从平面切成约12°的衬底表面;基板表面上的缓冲外延层;缓冲外延层上的n型外延层;在n型外延层上的顶部接触。缓冲外延层可以包括以大约1×10 15 Sup> cm -3 Sup>到大约5×10 的浓度掺杂的n型4H-SiC外延层。 18 Sup> cm −3 Sup>与氮,硼,铝或它们的混合物。该n型外延层可以包括以大约1×10 13 Sup> cm -3 Sup>到大约5×10 <的浓度掺杂的n型4H-SiC外延层。 Sup> 15 Sup> cm −3 Sup>(含氮)。顶部接触件可以具有约8nm至约15nm的厚度。
展开▼