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Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

机译：4H-SiC（0001）外延层中向内生长的堆叠缺陷的表征及其对高压肖特基势垒二极管的影响

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Fujiwara H; Kimoto T; Tojo T; Matsunami H;
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年度 2005
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正文语种 eng
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1. Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes [J] . H. Fujiwara, T. Kimoto, T. Tojo, Applied Physics Letters . 2005,第5期

机译：4H-SiC（0001）外延层中向内生长的堆叠缺陷的表征及其对高压肖特基势垒二极管的影响
2. Effect of inter-well coupling between 3C and 6H in-grown stacking faults in 4H-SiC epitaxial layers [J] . T. Robert, M. Marinova, S. Juillaguet, Materials science forum . 2011,第期

机译：4H-SiC外延层中3C和6H向内生长缺陷的阱间耦合效应
3. Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope [J] . Masaki Hasegawa, Toshiyuki Ohno Journal of Applied Physics . 2011,第7期

机译：镜面电子显微镜无损观察4H-SiC外延层内生长缺陷
4. Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and Its Impacts on High-Voltage Schottky Diodes [C] . H. Fujiwara, T. Kimoto, T. Tojo European Conference on Silicon Carbide and Related Materials . 2005

机译：在4H-SIC的快速外延生长中减少堆叠故障及其对高压肖特基二极管的影响
5. Schottky barriers for (0001), (0001bar), (11bar00), and (12bar10) crystallographic faces of four hydrogen and 6 hydrogen silicon carbide measured by current-voltage, capacitance-voltage and internal photoemission methods. [D] . Shigiltchoff, Oleg. 2003

机译：通过电流-电压，电容-电压和内部光发射法测量的四个氢和六个氢碳化硅的（0001），（0001bar），（11bar00）和（12bar10）晶面的肖特基势垒。
6. Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions [O] . Jinlan Li, Chenxu Meng, Le Yu, 2020

机译：各种缺陷对4H-SiC肖特基二极管性能的影响及其与外延生长条件的关系
7. Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers [O] . Camarda Massimo, Canino Andrea, La Magna Antonino, 2011

机译：4H-SiC外延层中（2,3（3））棒状堆垛层错的结构和电子表征

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

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