Nitrogen incorporation characteristics on a 4H-SiC epitaxial layer

摘要

The N incorporation characteristics on a 4H-SiC epitaxial layer were reinvestigated. It was found that the desorption process and thermally activated process are aspects of the N incorporation mechanism of 4H-SiC to which attention should be paid. This mechanism depends on both the rate-limiting condition and lattice polarity. The N desorption process dominates the N incorporation of the Si-face under the C-supply-limiting condition and that of the C-face without recourse to the rate-limiting condition. On the other hand, the thermally activated process dominates only the N incorporation of the Si-face under the Si-supply-limiting condition. The site-competition phenomenon was also found to depend on the rate-limiting condition.