Jiangsu Provincial Key Lab of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing, China 210093;
National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjin;
4H-SiC; homoepitaxial growth; Schottky barrier diode; ideal factor; barrier height;
机译:后退火工艺可改善Ti / Al 4H-SiC肖特基势垒二极管中肖特基势垒高度的不均匀性
机译:Al / Ti / 4H-SiC肖特基势垒二极管电流-电压-温度特性的仿真与分析
机译:通过热处理改善Ti / 4H-SiC肖特基势垒二极管的反向特性
机译:TI / 4H-SIC肖特基屏障二极管主体遗传4H-SIC及特性的性质
机译:金/(100)砷化镓和金/硅化铂/(100)硅二极管的肖特基势垒高度和弹道电子传输特性的横向变化。
机译:具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
机译:用热处理改善Ti / 4H-siC肖特基势垒二极管的反向特性