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Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments

机译：用热处理改善Ti / 4H-siC肖特基势垒二极管的反向特性

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Dae Hwan Kim; Jong Ho Lee; Jeong Hyun Moon; Myong Suk Oh; Ho Keun Song; Jeong Hyuk Yim; Jae Bin Lee; Hyeong Joon Kim;
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年度 2015
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1. Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments [J] . Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：通过热处理改善Ti / 4H-SiC肖特基势垒二极管的反向特性
2. Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments [J] . Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：通过热处理改善Ti / 4H-SiC肖特基势垒二极管的反向特性
3. Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode [J] . Kyoung Sinsu, Jung Eun-Sik, Sung Man Young Microelectronic Engineering . 2016,第mara期

机译：后退火工艺可改善Ti / Al 4H-SiC肖特基势垒二极管中肖特基势垒高度的不均匀性
4. Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments [C] . Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, IUMRS International Conference in Asia . 2007

机译：通过热处理改善Ti / 4H-SiC肖特基屏障二极管的反向特性
5. SCHOTTKY BARRIER DIODES AND THEIR APPLICATION AS SCHOTTKY BARRIER RESISTORS [D] . HOGEBOOM, JOHN GORDON. 1973

机译：肖特基势垒二极管及其作为肖特基势垒电阻的应用
6. Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure [O] . Chien-Yu Li, Min-Yu Cheng, Mau-Phon Houng, 2018

机译：氢等离子体表面处理和AlxOx保护环结构增强AZO / Si肖特基势垒二极管的电特性
7. Multi-Barrier Height Characterization and DLTS Study on Ti/W 4H-SiC Schottky Diode [O] . Teng Zhang, Christophe Raynaud, Dominique Planson 2019

机译：TI / W 4H-SIC肖特基二极管的多屏障高度表征和DLTS研究

Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments

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