Improvement of the reverse characteristics of Ti/4H-SiC Schottky barrier diodes by thermal treatments

摘要

Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 ℃ thermal treatment conditions. After the heat treatment at 750 ℃, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increased breakdown voltage VH from 545 V to 830 V. An improvement of breakdown voltage (VD) was observed in case of the thermal treatment in nitrogen ambient at 750 ℃ for 2 min. Ideality factor (n), specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 mΩ-cm2, 1.33 eV respectively.