Reactive Ion Etching Process of 4H-SiC Using the CHF_3/O_2 Mixtures and a Post-O_2 Plasma-Etching Process

摘要

This paper reports on an effective RIE process of (4H, 6H) - SiC using a CHF_3/O_2 mixture. The experiments were conducted in three folds: a) using CHF_3/O_2 gas mixture only b) using CHF3/O2 gas mixture with a consecutive O_2 plasma etching process and c) using SF_6/O2 gas mixture without any extra processing. The etching characteristics from the different methods were examined and compared. Under the optimized etching conditions, the process using CHF_3/O_2 gas mixture with a consecutive O_2 plasma etching process results in 750 A/min for 4H-SiC of the etch rate and about 1.0 A of surface roughness.