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Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen
Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen
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机译:基于含一氟甲烷和氧气的气体混合物在半色调相掩模上进行氮化硅钼层的等离子刻蚀工艺
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摘要
A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH3F and O2. A high cathode power is used for the etching. The method has a very high selectivity between the substrate and the phase shift layer, so that half-tone phase masks with a high imaging quality can be produced.
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