Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

摘要

Electrical characteristics of 4H-SiC pn diodes fabricated by liquid phase epitaxy (LPE) were investigated. Current-voltage (I-V) and capacitance voltage (C-V) characteristics of the pn junction were measured in the temperature range from 300 to 700 K and at different frequencies, respectively. Analysis of the C-V data indicates the existence of a thin transient (defect) layer between p- and n-layers of the pn junction. Analysis of I-V data showed that the defect layer limits the forward current. The forward I-V characteristics might be described by the tunnelling-recombination model, in which it is assumed that the conduction electrons form an n-layer tunnel into the available band-gap states located in the defect layer and then fall into the valence band of the p-layer.