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'KENMA', the origin of manufacturing, planarization CMP and its future — A breakthrough toward high-efficient machining of hard-to-machine innovative materials

机译:“ KENMA ”,制造,平面化CMP的起源及其未来-高效加工难以加工的创新材料的突破

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摘要

"KENMA", which means lapping and polishing, is the origin of manufacturing in the ancient era; since then, it has always been the innovative abrasion machining technology. As commonly known, Chemical Mechanical Polishing (CMP) developed along with semiconductor devices has been introduced to device production process, which used to be untouchable for wet process, and has become indispensable planarization method to various technologies such as multilayer wiring and MEMS. Since the invention of a transistor, the primary material for semiconductor devices has been silicon; however it is reaching its theoretical limitation especially in power electronics. In 21st century, we expect that wide band-gap materials such as SiC and GaN or ultimately diamond single crystals will take the major role in power electronics. Nevertheless, the growth and machining technology of these materials are still under development. The immaturity of these technologies is currently the bottleneck for high-performance devices and innovative breakthroughs are strongly demanded. This presentation talks about a machining technology in Japan and the history of "The Planarization & CMP Technical Committee, JSPE" which had 20-year anniversary this year. I will also introduce recent technical topics as follows: “Dilatancy-Pad” invented and developed in our laboratory to apply dilatancy phenomena to polishing pad, ultra-high speed, high-quality machining technology using “High-Speed & High-Pressure Machine”, “a plasma CMP” as a breakthrough for the future high-efficient machining, which is a fusion technology of plasma chemical vaporization machining (CVM) and CMP.
机译:“ KENMA”的意思是研磨和抛光,是古代制造的起源。从那时起,它一直是创新的研磨加工技术。众所周知,与半导体器件一起开发的化学机械抛光(CMP)已被引入到器件生产工艺中,该工艺过去对于湿法工艺是不可接触的,并且已成为诸如多层布线和MEMS之类的各种技术必不可少的平面化方法。自从发明晶体管以来,半导体器件的主要材料一直是硅。然而,它正达到其理论极限,特别是在电力电子领域。我们期望在21世纪,宽带隙材料(例如SiC和GaN或最终的金刚石单晶)将在电力电子领域起主要作用。然而,这些材料的生长和加工技术仍在开发中。这些技术的不成熟目前是高性能设备的瓶颈,并且强烈要求创新。本演讲讲述了日本的加工技术以及今年已有20周年的“日本平面化与CMP技术委员会JSPE”的历史。我还将介绍以下最新技术主题:在我们的实验室中发明和开发的“ Dilatancy-Pad”,用于将“剪胀现象”应用于使用“高速和高压机”的抛光垫,超高速,高质量加工技术,“等离子CMP”是未来高效加工的突破,它是等离子化学汽化加工(CVM)和CMP的融合技术。

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