Process and Device Calibration for 31/51nm NMOS/PMOS Devices fabricated by Direct Write E-Beam

摘要

In order to ensure predictability of process and device calibration tools, we manufactured CMOS devices with smallest end-of-line gate electrode dimensions of 31nm and 51nm by applying direct write e-beam lithography. A special test-chip was designed to accommodate the peculiarities of a direct write e-beam lithography process. The devices were fabricated, measured and analyzed. Process and device calibration was carried out to calibrate the threshold vs. gate length characteristics.