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High Throughput SEG of Highly In-Situ Doped SiCP/SiP Layers for NMOS Devices Using a Si3H8SiH3CH3/PH3/Cl2 based CDE Process

机译：使用Si3H8SiH3CH3 / PH3 / CL2的CDE过程，高通量SEG用于NMOS器件的高度原位掺杂SICP / SIP层

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1. Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices [J] . Shogo Mochizuki, Rainer Loesing, Zhengmao Zhu, Thin Solid Films . 2014,第apra30期

机译：通过n型金属氧化物半导体器件的原位掺杂和注入工艺形成Si：CP层
2. Organic light-emitting devices based on solution-processable small molecular emissive layers doped with interface-engineering additives [J] . Ha Tae-Won, Kim Young-Baek, Heo Gi-Seok, RSC Advances . 2016,第39期

机译：基于掺有界面工程添加剂的可溶液加工的小分子发射层的有机发光器件
3. Organic light-emitting devices based on solution-processable small molecular emissive layers doped with interface-engineering additives [J] . Ha Tae-Won, Kim Young-Baek, Heo Gi-Seok, RSC Advances . 2016,第39期

机译：基于掺有界面工程添加剂的可溶液加工的小分子发射层的有机发光器件
4. High throughput selective epitaxial growth of in-situ doped SiCP/SiP layers for NMOS devices using a Si_3H_8/SiH_3CH_3/PH_3/Cl_2 based cyclic deposition and etch process [C] . Matthias Bauer Meeting of the Electrochemical Society . 2012

机译：使用基于Si_3H_8 / SIH_3CH_3 / PH_3 / CL_2的循环沉积和蚀刻工艺，用于NMOS器件的原位掺杂SICP / SIP层的高吞吐选择性外延生长
5. Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices [O] . Mojtaba Abdi-Jalebi, M. Ibrahim Dar, Satyaprasad P. Senanayak, 2019

机译：通过空穴传输层的分级掺杂进行电荷提取可提供高度发光和稳定的金属卤化物钙钛矿器件
6. Doping of Tetraalkylammonium Salts in Polyethylenimine Ethoxylated for Efficient Electron Injection Layers in Solution-Processed Organic Light-Emitting Devices [O] . -1

机译：溶液加工有机发光器件中的高效电子注射层的聚乙烯亚乙基乙氧基化中的四烷基铵盐掺杂
7. In-situ Rapid Isothermal Processing (RIP) of InP Based Devices. [R] . Singh, R., Thakur, R. P., Katz, A., 1990

机译：基于Inp的器件的原位快速等温处理（RIp）。

High Throughput SEG of Highly In-Situ Doped SiCP/SiP Layers for NMOS Devices Using a Si3H8SiH3CH3/PH3/Cl2 based CDE Process

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