Electron-active cyclotron resonance of holes in -type InAs in very high magnetic fields

摘要

We have studied cyclotron resonance in a ρ-type InAs thin film in high magneticfields up to 400 T. The resonance peaks are found to be observed with the electron-activecircular polarization as well as with the hole-active one. The experiments using the appliedmagnetic field tilted from the normal direction of the sample surface was performed in orderto check a possibility of the electron cyclotron resonance due to electrons in the surfaceinversion layer. The dependence of the peak position on the field-angle shows no indicationof the two-dimensional character. The Landau levels calculated using the Pidgeon and Brownmodel can explain most of the resonance peak positions except for the heavy hole cyclotronresonance. The effects of the band mixing which is significant in narrow gap materials andin the megagauss range and the complexity of the valence band are found to be important toexplain the electron-active hole cyclotron resonance observed in this work.