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Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition

机译:UIS应力条件下超结MOSFET的失效分析与改进

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Reliability has increasingly become an important concern in Superjunction MOSFET (SJ-MOS) design. Failure mechanism and improvement in the process of unclamped inductive switching (UIS) are always the research focuses of SJ-MOS reliability. This paper analyzes the failed SJ-MOS devices in the UIS test, and then studies the influences of drift-region design on the avalanche durations of SJ-MOS and proposes the improvement suggestions.
机译:可靠性已越来越成为超结MOSFET(SJ-MOS)设计中的重要问题。失效机理和非钳位电感开关过程的改进一直是SJ-MOS可靠性研究的重点。本文分析了在UIS测试中出现故障的SJ-MOS器件,然后研究了漂移区设计对SJ-MOS雪崩持续时间的影响,并提出了改进建议。

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