SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

摘要

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprises an active cell area including a plurality of superjunction trench power MOSFETs, and a Schottky diode area including a plurality of Schottky diodes formed in the drift region having the superjunction structure. Each of the integrated Schottky diodes includes a Schottky contact between a lightly doped semiconductor layer and a metallic layer