A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs

摘要

An effective method for identifying the spatial positions of traps in GaN high-electron-mobility transistors (HEMTs) was proposed using the current transients. Two traps with different time constants were demonstrated in the AlGaN barrier layer and GaN buffer layer, respectively. In particular, their trapping and de-trapping mechanisms were also characterized by various electric biases. This method shows its advantages in convenience, non-destructive test, and the amenability in long-term stress experiments.