IR Studies on VO_n, C_iO_i, and C_iC_s Defects in Ge-doped Cz-Si

机译：掺Ge的Cz-Si中VO_n，C_iO_i和C_iC_s缺陷的红外研究

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This paper reports experimental results on the production and annealing of oxygen-vacancy related (VO_n, l

机译：本文报告了在掺锗的切克拉斯基生长的硅（Cz-Si）中与氧空位有关的（VO_n，l

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来源
《Gettering and defect engineering in semiconductor technology XIV》|2011年|p.147-153|共7页
会议地点 Loipersdorf(AT);Loipersdorf(AT)
作者
C.A. Londos; E.N. Sgourou; A. Andrianakis; A. Misiuk; V.V. Emtsev; H. Ohyama;
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作者单位

Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 15784,Greece;

Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 15784,Greece;

Solid State Physics Section, University of Athens, Panepistimiopolis Zografos, Athens 15784,Greece;

Insitute of Electron Technology, Al.Lotnikow 02 668, Warsaw, Poland;

Ioffe Physicothechnical Institute of the Russian Academy of Sciences, Politeknicheskaya ul. 26194021 St Petersburg, Russia;

Kumamoto National College of Technology, 26592, Nishigoshi, Kumamoto 8611102, Japan;

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原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
Ge-doped Si; point defects; electron irradiation; IR spectroscopy;

机译：掺锗硅点缺陷电子辐照红外光谱;

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专利

1. IR studies on VO_n, C_iO_i, and C _iC_s defects in Ge-doped Cz-Si [J] . Londos C.A., Sgourou E.N., Andrianakis A., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：锗掺杂Cz-Si中VO_n，C_iO_i和C _iC_s缺陷的IR研究
2. Engineering VO, C_iO_i and C_iC_s defects in irradiated Si through Ge and Pb doping [J] . C. A. Londos, T. Angeletos, E. N. Sgourou, Journal of materials science . 2015,第4期

机译：通过Ge和Pb掺杂对Si进行工程VO，C_iO_i和C_iC_s缺陷
3. Defects in Ge-doped Cz-Si annealed under high stress [J] . Misiuk A, Yang DR, Surma B, Materials science in semiconductor processing . 2006,第1a3期

机译：高应力退火后的掺Ge的Cz-Si缺陷
4. IR Studies on VO_n, C_iO_i, and C_iC_s Defects in Ge-doped Cz-Si [C] . C. A. Londos, E. N. Sgourou, A. Andrianakis, International Biannual Meeting on Gettering and Defect Engineering in Semiconductor . 2011

机译：GE-DOPED CZ-SI中的VO_N，C_IO_I和C_IC_S缺陷的IR研究
5. First principles study of electronic structures of defects in zirconium germanium phosphate and defect chalcopyrites. [D] . Jiang, Xiaoshu. 2005

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6. Association between Antibiotic Use among Pregnant Women with Urinary Tract Infections in the First Trimester and Birth Defects National Birth Defects Prevention Study 1997 to 2011 [O] . Elizabeth C. Ailes, Suzanne M. Gilboa, Simerpal K. Gill, -1

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7. Study of point defects in as-drawn and irradiated Ge-doped optical fibers using cathodoluminescence [O] . 2017

机译：阴极发光法研究掺锗辐照光纤的点缺陷
8. IR Properties of Ge-Doped CH - A Continuation [R] . 2003

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IR Studies on VO_n, C_iO_i, and C_iC_s Defects in Ge-doped Cz-Si

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