Formation of Copper-Related Deep-Level Centers in Irradiated p-Type Silicon

机译：辐射的p型硅中与铜有关的深层中心的形成

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350 K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.

机译：提出了对铜污染的电子辐照的FZ-Si的深层中心进行DLTS研究的结果。铜在350 K的温度下从受铜污染的表面扩散到先前辐射的样品中。由于此过程而形成的最丰富的与铜有关的络合物与先前研究的经铜扩散的Cz-Si相同。

著录项

来源
《Gettering and defect engineering in semiconductor technology XIV》|2011年|p.154-157|共4页
会议地点 Loipersdorf(AT);Loipersdorf(AT)
作者
Nikolai Yarykin; Joerg Weber;
展开▼
作者单位

Institute of Microelectronics Technology RAS, 142432 Chemogolovka, Russia;

Technische Universitaet Dresden, 01062 Dresden, Germany;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
silicon; copper impurity; radiation defects;

机译：硅;铜杂质辐射缺陷;

相似文献

外文文献
中文文献
专利

1. Formation of copper-related deep-level centers in irradiated p-type silicon [J] . Yarykin N., Weber J. Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：辐射的p型硅中与铜有关的深层中心的形成
2. Formation of copper-related deep-level centers in irradiated p-type silicon [J] . Yarykin N., Weber J. Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：辐射的p型硅中与铜有关的深层中心的形成
3. Copper-related deep-level centers in irradiated p-type silicon [J] . Nikolai Yarykin, Jorg Weber Physical review . 2011,第12期

机译：辐射p型硅中与铜有关的深层中心
4. Formation of Copper-Related Deep-Level Centers in Irradiated p-Type Silicon [C] . Nikolai Yarykin, Jorg Weber International Biannual Meeting on Gettering and Defect Engineering in Semiconductor . 2011

机译：照射P型硅中铜相关的深层中心的形成
5. Formation of nano-sharp tips and microbumps on silicon and metal films by localized single-pulse laser irradiation. [D] . Moening, Joseph Patrick. 2010

机译：通过局部单脉冲激光辐照在硅和金属膜上形成纳米锋利的尖端和微凸点。
6. Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing [O] . Bohdan Pavlyk, Markiyan Kushlyk, Dmytro Slobodzyan 2017

机译：p型硅晶体在塑性变形和高温退火下的位错发光中心的起源及其重组
7. Effect of low-temperature annealing on defect causing copper-related light-induced degradation in p-type silicon [O] . Vahlman, Henri, Haarahiltunen, Antti, Kwapil, Wolfram, 2017

机译：低温退火对导致p型硅中与铜有关的光致降解的缺陷的影响

Formation of Copper-Related Deep-Level Centers in Irradiated p-Type Silicon

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅