P-TYPE SILICON CARBIDE FORMATION BY ION IMPLANTATION AND P-TYPE SILICON CARBIDE

摘要

Ion implantation of SiC using approximately equal amounts of C and a p-type acceptor such as A1 or B creates p-doped SiC single crystal semiconductors with high uniformity, reproducibility, and crystal and electrical properties. Moreover, excellent ohmic contacts can be formed on the p-doped SiC layer using this method. This implantation approach makes it possible to create and fabricate both integrated circuit and discrete SiC devices.