有机溶剂在P型宏多孔硅电化学腐蚀中的应用研究

摘要

近年来,多孔硅以其良好的光学、热学、电学以及机械特性使其在微传感器技术领域得到广泛的应用,电化学腐蚀多孔硅的各种方法与原理引起越来越多的关注.研究了P型硅的电化学腐蚀过程中,在腐蚀溶液中使用有机溶剂对多孔硅的制备、速率、成孔机理等方面的影响.研究发现,在分别使用有机溶剂二甲基甲酰胺(DMF)和二甲基亚砜(DMSO)的氢氟酸(HF)腐蚀溶液中,可以制备出孔壁光滑、具有高深宽比的高质量P型宏多孔硅,并发现了一种快速腐蚀P型宏多孔硅的方法,得到高达1900 μm/h的腐蚀速率,这有助于提高多孔硅在微传感器批量化生产应用中的效率.在涌流模型基础上,分析了有机溶剂的氧化性和质子(H)提供能力,以及在P型多孔硅快速腐蚀过程中的作用.%In recent years, porous silicon is widely used in the field of micro-transducer technology due to its characteristics of good optics, calorifics, electrics and mechanism. More and more attention are paid on various method and theory of P type porous silicon' s electrochemistry etching. The effect of using organic solvent in electrolyte on preparation, rates, principle of pore forming of porous silicon is investigated in the process of electrochemistry etching. When using dimethylformamide(DMF) and dimethyl sulfoxide (DMSO) respectively as organic solvent in electrolyte, high quality macro-porous silicon which has high depth-to-width-ratio and has smooth wall of pole. A method for fast macroporous silicon etching is discovered with etching rate up to 1900 μm/ h, which will help to improve the efficiency of application of porous silicon in the field of batch production of micro-transducer. On the basis of current-burst-model,oxidability and H-providing ability and the effect of organic solvent in the etching process of P type porous silicon is analyzed.