High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

摘要

Throughput requirement of the epitaxial process of GaN on Si is described. The impact of the growth rate of AlGaN for the buffer layer of GaN on Si is highlighted. In the attempt of growing GaN on Si, we have tested a production scale high flow speed MOVPE reactor (TAIYO NIPPON SANSO UR25k) for 6 inch X 7 wafers. Al_(0.58)Ga_(0.42)N was grown with the growth rate of 1.85μm/hr at 30 kPa. A1N was grown with the growth rate of 1.4μm/hr at 13kPa. AIN/GaN SLS (5nm/20nm) was also grown at the growth rate of 1.4μm/hr. An excellent uniformity of aluminum concentration of less than 0.5% was also obtained for Al_(0.58)Ga_(0.42)N. The challenge which we are facing to further increase of the throughput is summarized.