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Photonic crystals from step and flash imprint lithography

机译:步进和闪光压印光刻技术的光子晶体

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Photonic crystals are structures which exhibit a band gap in the electromagnetic spectrum as a result of dielectric periodicity. These structures present the potential to control electromagnetic waves in a similar manner to the way electrons are controlled by semiconductors. To obtain a photonic band gap in a specific region of the spectrum, there are two important characteristics of the photonic crystal that must be considered. The first is the length scale of the periodicity of the crystal, which governs the frequency range in which the band gap falls. The second is the dielectric contrast between the two media which comprise the crystal, which controls the size of the bang gap. Therefore, to construct a photonic crystal which could be used as an optical device, such as a waveguide or filter, the features should be on the order of optical wavelengths, or nanometers. The dielectric contrast through the visible region should also be large enough to open a band gap. Lithography techniques are ideally suited to pattern such structures. This work focused on the use of step and flash imprint lithography as an ideal patterning technology for two dimensional photonic crystals because of its capability for sub-50 nm patterning. Another attractive aspect of using step and flash imprint lithography is the potential to pattern a functional polymer as the crystal. The feasibility of printing structures needed for photonic crystals using imprint lithography was first demonstrated. Then, a strategy to raise the index of refraction of imprint compatible polymer formulations for large dielectric contrast using metal oxide nanoparticles was investigated. A maximum index of n = 1.65 was achieved, but at the high nanoparticle concentrations needed to reach this value, the formulations would not photocure. At low concentrations, imprints were obtained and uses for the resulting moderate index polymer composites as partial band gap photonic crystals were suggested.
机译:光子晶体是由于介电周期性而在电磁频谱中显示出带隙的结构。这些结构具有以类似于电子控制半导体的方式来控制电磁波的潜力。为了在光谱的特定区域中获得光子带隙,必须考虑光子晶体的两个重要特性。第一个是晶体周期性的长度尺度,它决定了带隙下降的频率范围。第二个是构成晶体的两种介质之间的介电对比,它控制了爆炸间隙的大小。因此,为了构造可以用作诸如波导或滤光器的光学装置的光子晶体,特征应当在光学波长或纳米量级上。通过可见光区域的介电对比度也应足够大,以打开带隙。光刻技术非常适合于构图此类结构。这项工作着重于使用步进和快速压印光刻技术作为二维光子晶体的理想构图技术,因为它具有50 nm以下的构图能力。使用分步和快速压印光刻的另一个吸引人的方面是将功能性聚合物图案化为晶体的潜力。首先证明了使用压印光刻技术印刷光子晶体所需的结构的可行性。然后,研究了使用金属氧化物纳米粒子提高用于大介电对比度的压印兼容聚合物配方的折射率的策略。达到了最大指数n = 1.65,但是在达到该值所需的高纳米颗粒浓度下,该制剂不会光固化。在低浓度下,会获得印记,并建议将所得的中等折射率聚合物复合材料用作部分带隙光子晶体。

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