Study of single-layer e-beam lithography for x-ray mask making

摘要

Abstract: The possibilities of sub-quarter-micron pattern fabrication by e- beam lithography with single-layer resist was studied on 0.5 $mu@m thick W x-ray mask absorber. Calculation was made to evaluate the parameters determining the e-beam dose profile in the resist. It was found that at the incident energy of 40 keV pattern contrast in the resist, whose thickness is 0.2 $mu@m, is homogenized through the depth. The experimental result proved that 0.15 $mu@m line/space can be resolved by using a high contrast resist with this thickness.!15