MASK FOR E-BEAM LITHOGRAPHY AND METHOD FOR FABRICATING THE SAME, E-BEAM EXPOSURE METHOD

摘要

A mask for the electron-beam lithography and manufacturing method thereof and electron beam exposure strategy using the mask are provided to reduce registration errors by inserting the mark for the position correction into a mask and improve pattern uniformity. A mask for the electron-beam lithography comprises a transparent substrate(100), a light-shielding layer(110), and a light-shielding layer is formed in the top of the substrate. The light-shielding layer comprises the mark(120) for the position correction formed in the edge of substrate. The electron-beam resist is coated onto on the light-shielding layer.