首页> 外文会议>Electrochemical Society Meeting and International Symposium on Silicon-on-Insulator Technology and Devices XI; 20030428-20030502; Paris; FR >Estimation of Oxygen Dose by Spectroscopic Ellipsometry and Investigation of Oxide Formation Mechanism by FT-IR for ~(16)O~+-Implanted Si Wafers
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Estimation of Oxygen Dose by Spectroscopic Ellipsometry and Investigation of Oxide Formation Mechanism by FT-IR for ~(16)O~+-Implanted Si Wafers

机译:椭圆偏振光谱法估算氧剂量及FT-IR研究〜(16)O〜+注入硅晶片的氧化物形成机理

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摘要

Optical properties and the bonding structures of oxygen-ion (~(16)O~+)-implanted FZ-Si (111) wafers were characterized using spectroscopic ellipsometry and FT-IR, respectively. The ~(16)O~+-implantation was carried out at an acceleration energy of 180 keV with doses of 3-10 x 10~(17)/cm~2. It has been revealed that oxygen doses in the as-implanted Si wafers can be estimated by spectroscopic ellipsometry, and that their oxide formation mechanism can be also analyzed simply and non-desrructively by FT-IR.
机译:分别用椭圆偏振光谱法和傅立叶变换红外光谱(FT-IR)表征了注入氧离子(〜(16)O〜+)的FZ-Si(111)晶片的光学性能和键合结构。 〜(16)O〜+注入是在180 keV的加速能量下进行的,剂量为3-10 x 10〜(17)/ cm〜2。已经发现,可以通过椭圆偏振光谱法估计注入的硅晶片中的氧剂量,并且还可以通过FT-IR简单且无损地分析其氧化物形成机理。

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