首页> 外文会议>International symposium on silicon-on-insulator technology and devices >Estimation of Oxygen Dose by Spectroscopic Ellipsometry and Investigation of Oxide Formation Mechanism by FT-IR for ~(16)O~+-Implanted Si Wafers
【24h】

Estimation of Oxygen Dose by Spectroscopic Ellipsometry and Investigation of Oxide Formation Mechanism by FT-IR for ~(16)O~+-Implanted Si Wafers

机译:通过光谱椭圆形测量估计氧剂量和FT-IR对氧化物形成机理的研究〜+ -implanted Si晶片

获取原文

摘要

Optical properties and the bonding structures of oxygen-ion (~(16)O~+)-implanted FZ-Si (111) wafers were characterized using spectroscopic ellipsometry and FT-IR, respectively. The ~(16)O~+-implantation was carried out at an acceleration energy of 180 keV with doses of 3-10 x 10~(17)/cm~2. It has been revealed that oxygen doses in the as-implanted Si wafers can be estimated by spectroscopic ellipsometry, and that their oxide formation mechanism can be also analyzed simply and non-desrructively by FT-IR.
机译:使用光谱椭偏测量和FT-IR,表征光学性质和氧离子(〜(16)O〜+) - 注入的FZ-Si(111)晶片的粘接结构。在180keV的加速能中进行〜(16)o + -implantation,剂量为3-10×10〜(17)/ cm〜2。已经揭示了通过光谱椭圆形测量估计了含有植入的Si晶片中的氧剂量,并且还可以通过FT-IR简单地分析它们的氧化物形成机制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号