RADIATION RESPONSE OF SOI CMOS/4M SRAMS FABRICATED IN UNIBOND SUBSTRATES IN UNIBOND SUBSTRATES

摘要

The total dose ionizing radiation response of 0.35 μm PD SOI CMOS transistors and the single event upset cross-section of 4M SRAMs fabricated in new UNIBOND substrates were measured and discussed. Both the radiation-induced back-channel threshold-voltage shift and the heavy-ion-induced single event upset cross-section have been evaluated and described in the form of a Weibull function.