Analysis of 2-MeV Electron-Irradiation Induced Degradation in FD-SOI MOSFETs Fabricated on ELTRAN and UNIBOND Wafers

摘要

The degradation of the electrical performance of 2-MeV electron-irradiated thin gate oxide FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers is reported. The difference of the degradation is examined by analyzing the extracted MOS-transistor parameters. The degradation of the performance is discussed taking into account the front-back gate coupling effect and the floating body effect.