Total dose radiation effects of pressure sensors fabricated rnon Unibond-SOI materials

摘要

Piezoresistive pressure sensors with a twin-island structure were sucrncessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since rnthe piezoresistors were structured by the single crystalline silicon overlayer of the SOI rnwafer and were totally isolated by the buried SiO2, the sensors are radiation-hard.rnThe sensitivity and the linearity of the pressure sensors keep their original values after rnbeing irradiated by 60Co γ-rays up to 2.3 × 104 Gy (H2O). However, the offset voltage rnof the sensor has a slight drift, increasing with the radiation dose. The absolute walue rnof the offset voltage deviation depends on the pressure sensor itself. For comparison,rncorresponding polysilicon pressure sensors were fabricated using the similar process rnand irradiated at the same condition.