Extraction of near interface trap density in top gated graphene transistor using high frequency current voltage characteristics

摘要

Graphene as a material has created a lot of interest due to properties like high saturation velocity [1], high current carrying capacity, ambipolar characteristics [2] and high transconductance. These properties make graphene based transistors a promising candidate for high frequency applications. Recently, there have been [2–3] demonstration of RF mixers with graphene transistors. Traditional DC measurements are not sufficient when considering graphene transistors for high frequency circuit design, making it essential to study the transistor IV performance at operating frequencies >GHz. In this work we outline an RF IV extraction technique and use physics based analytical model to evaluate the performance of graphene transistors with HfO2 high-κ dielectric.