Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors

摘要

Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the dielectric interface of top-gate graphene field-effect transistors. Using DCA method, the highest charge trap density (cm eV) is extracted at Fermi level eV. This is the first quantitative estimation of trap density at a specific Fermi level of graphene.