Flip Chip Bump Electromigration Reliability: A comparison of Cu Pillar, High Pb, SnAg, and SnPb Bump Structures

摘要

Electromigration tests are conducted on High Pb, SnAg, SnPb and Cu Pillar Flip Chip bumps to determine thernrelative performance of different bump metallurgies on current carrying capacity. A special test vehicle wasrndesigned and tests are being conducted for three (3) different current levels at three (3) temperature conditions.rnAlthough complete data is not available at the time of writing this paper, the data to date is summarized in this paper.