Deep-level defects in epitaxial silicon for VLSI technology

摘要

Deep level transient spectroscopy (DLTS) has been employed to study nickel-related deep-level defects in epitaxial silicon used in very large-scale integration (VLSI) technology. A number of Ni-related hole traps are observed. The main hole trap in the both p/p and p/p~+ epitaxial layers is located at E_v+0.49eV. The depth profiles of the traps concentrations in the epilayers are compared.