METHOD FOR FABRICATING A SILICON CARBIDE EPITAXIAL WAFER AND THE SILICON CARBIDE EPITAXIAL WAFER CAPABLE OF REDUCING DEFECTS

摘要

PURPOSE: A method for fabricating a silicon carbide epitaxial wafer and the silicon carbide epitaxial wafer are provided to increase growth temperature by controlling the amount of silicon and carbon gases supplied.;CONSTITUTION: A carbon source and a silicon source are supplied to a reaction chamber (ST10). The reaction chamber is heated (ST20). The amount of silicon and carbon sources supplied is controlled (ST30). The amount of the silicon source is increased or decreased by controlling the amount of the sources.;COPYRIGHT KIPO 2013;[Reference numerals] (ST10) Carbon source and a silicon source are supplied; (ST20) Reaction chamber is heated; (ST30) Amount of silicon and carbon sources is controlled