SILICON CARBIDE SUBSTRATE, AN EPITAXIAL WAFER, AND A METHOD FOR MANUFACTURING THE SILICON CARBIDE SUBSTRATE, CAPABLE OF EFFICIENTLY REDUCING RESIDUE

摘要

PURPOSE: A silicon carbide substrate, an epitaxial wafer, and a method for manufacturing the silicon carbide substrate are provided to efficiently reduce the number of residues attached on a main surface by performing an etching process with the gas containing hydrogen or hydrogen chloride.;CONSTITUTION: An underlying substrate with a main surface made of silicon carbide is prepared. The main surface is cleaned with a first alkaline solution and a second alkaline solution. A silicon carbide substrate(10) is formed through a cleaning process. The number of residues on the main surface of the silicon carbide substrate is between 0.2 to 200.;COPYRIGHT KIPO 2010