Method for manufacturing silicon carbide single crystal substrate for epitaxial silicon carbide wafer and silicon carbide single crystal substrate for epitaxial silicon carbide wafer

摘要

Provided is a method for manufacturing an SiC single-crystal substrate making it possible to obtain an epitaxial SiC wafer provided with a high-quality SiC single-crystal thin film devoid of surface defects, etc. Also provided is said SiC single-crystal substrate. A method for manufacturing an SiC single-crystal substrate for an epitaxial SiC wafer having a high-quality SiC single-crystal thin film devoid of surface defects, etc., wherein the surface of the SiC single-crystal substrate is polished using chemical-mechanical polishing (CMP) at a speed of no more than 100 nm/h to remove the surface in a thickness of 100 nm or greater, and produce no more than 1 approximately circular pit per cm 2 , the pit having a diameter of 0.5-1.5 µm and a depth of 50-500 nm.