GENERATION PREDICTION METHOD OF LAMINATION DEFECT IN EPITAXIAL SILICON WAFER, AND MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER

摘要

To provide a method for predicting the density or the number of lamination defects generated in an epitaxial layer, in an epitaxial silicon wafer obtained by forming the epitaxial layer on a phosphorus-doped super low-resistance silicon wafer.SOLUTION: There is provided a generation prediction method of lamination defects in an epitaxial silicon wafer for predicting the density or the number of lamination defects generated in an epitaxial layer based on a residence time of a single crystal ingot at a cooling time in the range of 570°C±70°C, a resistivity or a phosphorus concentration of a phosphorus-doped super low-resistance silicon wafer, a furnace temperature at the wafer input time in pre-epitaxial pre-annealing, and a growth temperature of the epitaxial layer.SELECTED DRAWING: Figure 1