Evaluation method of white scratch defect reduction effect by cluster ion implantation into silicon wafer and manufacturing method of epitaxial silicon wafer

摘要

PROBLEM TO BE SOLVED: To provide a method for evaluating a white scratch defect reduction effect by cluster ion implantation into a silicon wafer, which can easily evaluate the white scratch defect effect by cluster ion implantation. SOLUTION: Cluster ions are implanted into a silicon wafer to form a modified layer in which the constituent elements of the cluster ions are solid-dissolved on the surface of the silicon wafer, and the modified layer is formed by a cathode luminescence method or a photoluminescence method. The intensity ratio (IW / ITO) of the intensity IW caused by the W line to the intensity ITO caused by the TO line in the emission spectrum of Evaluate the reduction effect of ion implantation. [Selection diagram] Fig. 1