Gettering Mechanism in Carbon-cluster-ion-implanted Epitaxial Silicon Wafers using Atom Probe Tomography

摘要

The difference in agglomerate defects formed by carbon-cluster-ion-implanted Czochralski (CZ)-Si and epitaxial Si has been investigated using atom probe tomography. In the previous work, we reported on the strong gettering capability in implanted epitaxial Si. We found that the distribution of O and C atom concentrations on agglomerates differs between CZ-Si and epitaxial Si. This suggests that a C agglomerate, which grows without including O atoms, results in strong gettering efficiency for Fe.