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METHOD OF EVALUATING IMPURITY GETTERING CAPABILITY OF EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER
METHOD OF EVALUATING IMPURITY GETTERING CAPABILITY OF EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER
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机译:硅外延片和硅外延片杂质吸收能力的评估方法
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摘要
Provided is a method of evaluating the impurity gettering capability of an epitaxial silicon wafer, which allows for very precise evaluation of the impurity gettering behavior of a modified layer formed immediately under an epitaxial layer, the modified layer containing carbon in solid solution. In this method, a modified layer located immediately under an epitaxial layer, the modified layer containing carbon in solid solution, is analyzed by three-dimensional atom probe microscopy, and the impurity gettering capability of the modified layer is evaluated based on a three-dimensional map of carbon in the modified layer, obtained by the analysis.
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