首页> 外文会议>Conference on Micromachining and Microfabrication Process Technology; 20080122-23; San Jose,CA(US) >Microstructures with rounded concave and sharp-edged convex corners in a single step wet anisotropic etching
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Microstructures with rounded concave and sharp-edged convex corners in a single step wet anisotropic etching

机译:一步湿法各向异性蚀刻中具有圆角凹面和尖角凸角的微结构

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This paper reports a wet anisotropic etching process for the fabrication of silicon MEMS structures with rounded concave and sharp convex corners on (100)-Si wafers. The process is developed using tetramethyl ammonium hydroxide (TMAH) at different concentrations (10, 20, 25 wt%) and a small amount (0.1% v/v) of non-ionic surfactant NC-200. The etching characteristics are measured on a silicon hemisphere and several Si(100) wafers at 60 ℃. The hemisphere is used to observe the etching behavior of different crystallographic planes. The present work aims at minimizing the etch rates of non-(100) planes, so that microstructures with rounded concave corners and convex corners can be realized easily. The proposed anisotropic wet etching is used for the fabrication of different kinds of microfluidic channels. Conformal etching in a single step can be realized for arbitrary mask designs targeting 20-25 μm deep microstructures.
机译:本文报道了一种湿法各向异性蚀刻工艺,用于在(100)-Si晶圆上制造具有圆形凹面和尖角凸角的硅MEMS结构。使用不同浓度(10、20、25 wt%)和少量(0.1%v / v)非离子表面活性剂NC-200的四甲基氢氧化铵(TMAH)开发该方法。在60℃下,在硅半球和几个Si(100)晶片上测量蚀刻特性。半球用于观察不同晶体平面的蚀刻行为。本工作旨在最小化非(100)平面的蚀刻速率,从而可以容易地实现具有圆形凹角和凸角的微结构。所提出的各向异性湿法刻蚀用于制造各种微流体通道。对于以20-25μm深的微结构为目标的任意掩模设计,都可以在一个步骤中进行保形蚀刻。

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