Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer

摘要

Structural characteristics of semiconducting heterostructures AlGaAs/GaAs/AlGaAs containing either single quantum well or two quantum wells separated with a thin AlAs layer are estimated by means of the double-crystal X-ray diffractometry. It is found that an additional Si-doping of outer barrier layers results in the formation of abrupt (less than 2 nm) interfaces at quantum wells.