首页> 外文会议>Conference on Advances in Resist Technology and Processing XXI pt.2; 20040223-20040224; Santa Clara,CA; US >Effect of Film Thickness on the Dissolution Rate Behavior of Photoresist Polymer Thin Films
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Effect of Film Thickness on the Dissolution Rate Behavior of Photoresist Polymer Thin Films

机译:膜厚对光致抗蚀剂聚合物薄膜溶解速率行为的影响

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Fabrication of future nanoscale electronic devices will likely require the use of ultra-thin resist films. It has been observed that film thickness, molecular weight, and substrate interactions can significantly affect the thermophysical properties of polymer thin films such as the glass transition temperature and coefficient of thermal expansion. Recently, film thickness has been reported to have a dramatic impact on the diffusion coefficient of small molecules in polymer ultra-thin films. Both of these factors, changes in either the polymer film thermophysical properties or diffusion behavior, can potentially have an impact of the lithographic performance of polymer thin film photoresists. As an extension to this previous work, it is desirable to understand the influence of film thickness on a variety of other lithographically important polymer properties. Dissolution rate is one such important physical property for photoresist polymer thin films that is of particular importance to the microelectronics industry. Simulation of lithographic processes relies to a great extent on knowledge of the dissolution or development behavior of photoresist thin films. Resist contrast is also known to be strongly affected by the dissolution behavior of the resist matrix polymer. So far, the possibility of film thickness significantly affecting the dissolution behavior of thin photoresist films has generally been ignored. This paper reports on work focused on determining the effect of film thickness on the dissolution behavior of a variety of resist polymers including novolac, polyhydroxystyrene (PHOST), and bis-trifluoromethyl carbinol substitute polynorbornene (HFAPNB). In the present work, Quartz Crystal Microbalance (QCM) methods were used to determine the dissolution rate of polymer thin films for thicknesses ranging from approximately 1 μm to 100 nm. It was observed that both poly(hydroxystyrene) (PHOST) and bis-trifluoromethyl carbinol substituted polynorbornene (HFAPNB) exhibit strong surface acceleration behavior as compared to the classic surface inhibition that has been extensively studied in novolac polymers. Most importantly, the dissolution rate of PHOST and HFAPNB thin films was found to depend strongly on the thickness of the polymer film for film thicknesses below a critical thickness value.
机译:未来的纳米级电子设备的制造可能需要使用超薄抗蚀剂膜。已经观察到,膜厚度,分子量和基底相互作用可显着影响聚合物薄膜的热物理性质,例如玻璃化转变温度和热膨胀系数。近来,已经报道膜厚度对聚合物超薄膜中小分子的扩散系数具有显着影响。这两个因素,无论是聚合物膜热物理性质还是扩散行为的变化,都可能对聚合物薄膜光刻胶的光刻性能产生影响。作为对该先前工作的扩展,期望理解膜厚度对多种其他在光刻上重要的聚合物性能的影响。溶解速率是光致抗蚀剂聚合物薄膜如此重要的物理性能之一,这对于微电子工业而言尤其重要。光刻工艺的模拟在很大程度上取决于对光致抗蚀剂薄膜的溶解或显影行为的了解。还已知抗蚀剂对比度受抗蚀剂基质聚合物的溶解行为强烈影响。迄今为止,通常忽略膜厚度显着影响薄光致抗蚀剂膜的溶解行为的可能性。本文报道了有关确定膜厚对包括线型酚醛清漆,聚羟基苯乙烯(PHOST)和双三氟甲基甲醇替代聚降冰片烯(HFAPNB)在内的各种抗蚀剂聚合物的溶解行为的影响的工作。在目前的工作中,使用石英晶体微天平(QCM)方法确定厚度在大约1μm至100 nm之间的聚合物薄膜的溶解速率。观察到,与在酚醛清漆聚合物中已广泛研究的经典表面抑制相比,聚(羟基苯乙烯)(PHOST)和双三氟甲基甲醇取代的聚降冰片烯(HFAPNB)均具有很强的表面加速性能。最重要的是,对于低于临界厚度值的膜厚度,发现PHOST和HFAPNB薄膜的溶解速率很大程度上取决于聚合物膜的厚度。

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