THIN FILM INTEGRATED CIRCUIT DEVICE WITH THIN FILM INTEGRATED CIRCUIT, IC LABEL, CONTAINER, METHOD FOR FABRICATING SUCH THIN FILM INTEGRATED CIRCUIT DEVICE, METHOD FOR FABRICATING SUCH CONTAINER AND METHOD FOR CONTROLLING PRODUCT WITH SUCH CONTAINER TO STORE LOTS OF INFORMATION EVEN THOUGH HAVING THICKNESS SMALLER THAN THAT OF CONVENTIONAL SILICON WAFER

摘要

PURPOSE: A thin film integrated circuit device is provided to rapidly and easily exchange or manage information by having a very small thickness, and to supply various information to anyone. CONSTITUTION: An insulation layer is prepared. A plurality of mutually insulated semiconductor layers are formed on a part of the surface of the insulation layer. A thin film integrated circuit includes the plurality of semiconductor layers. A metal oxide is formed on another surface of the insulation layer. The metal oxide includes WO2 or WO3.