A thin-layer high-voltage silicon-on-insulator hybrid LDMOS/LIGBT device

摘要

We present a new lateral high-voltage silicon-on-insulator (SOI) power device structure which is a hybrid combination of bipolar and unipolar current flow segments. The hybrid LDMOS/LIGBT device shows a substantial performance advantage over LDMOS due to voltage-dependent conductivity-modulation and a resultant increase in maximum source-follower current capability. When fabricated in an integrated SOI process flow, the LDMOS/LIGBT hybrid device reduces the power device area by 25-50% for many applications, resulting in cost-effective integration and miniaturization of power conversion systems that use a half-bridge topology.