Abstract: Two methods for the formation of semiconductor films were proposed: (1) laser chemical vapor deposition was based on the deposition of elements owing to the photodissociation of iron carbonyl (Fe(CO)$-5$/) vapors while irradiating Si substrate surface with focused Ar$+$PLU$/-laser radiation ($lambda$-L$/ $EQ 488 nm) followed by focused YAG:Nd$+$PLU@3$/-laser radiation ($lambda$-L$/ $EQ 1064 nm) treatment of the deposited film at the power density of 10$+5$/ W/cm$+2$/ resulted in the formation of semiconductor phases: $beta@-iron disilicide ($beta@-FeSi$-2$/) and silicon carbide (SiC) which formed carbide-silicide phase with such stoichiometric composition FeSi$-2$MIN@X$/C$-X$/ and bandgap about 0.1 eV; (ii) electron beam sputtering was based on pure iron sputtering on Si substrate surface followed by focused YAG:Nd$+$PLU@3$/-laser radiation treatment of the deposited film at the power density ranging from 1.35 $MUL 10$+5$/ W/cm$+2$/ to 2.1 $MUL 10$+5$/ W/cm$+2$/ resulted in the formation of semiconductor phase ($beta@-SiFe$-2$/) with maximum bandgap about 0.05 eV and metal phase ($alpha@-FeSi$-2$/).!6
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机译：摘要：提出了两种形成半导体膜的方法：（1）激光化学气相沉积是基于羰基铁（Fe（CO）$-5 $ /）蒸气在照射Si衬底时发生光解离而形成的元素沉积。表面具有聚焦的Ar $ + $ PLU $ /-激光辐射（$ lambda $ -L $ / $ EQ 488 nm），然后聚焦YAG：Nd $ + $ PLU @ 3 $ /-激光辐射（$ lambda $ -L $ / $ EQ 1064 nm）以10 $ + 5 $ / W / cm $ + 2 $ /的功率密度处理沉积膜导致形成半导体相：β@-二硅化铁（$ beta @ -FeSi （$ -2 $ /）和碳化硅（SiC），形成具有化学计量组成FeSi $ -2 $ MIN @ X $ / C $ -X $ /的碳化硅化物相，带隙约为0.1 eV； （ii）电子束溅射是基于在Si衬底表面上进行纯铁溅射，然后对沉积膜进行YAG：Nd $ + $ PLU @ 3 $ /激光辐照处理，功率密度范围为1.35 $ MUL 10 $ + 5 $ / W / cm $ + 2 $ /至2.1 $ MUL 10 $ + 5 $ / W / cm $ + 2 $ /导致形成半导体相（$ beta @ -SiFe $ -2 $ /）带隙约为0.05 eV和金属相（$ alpha @ -FeSi $ -2 $ /）。！6
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