Relization of Strongly metal-dependent schottky barrier heights on n-GaAs by in situ electrochemical process

摘要

Pt,Ni,Coand Sn Schottky barriers were formed on n-GaAs by an in situ electrochemical process which consists which consists of anodic etching and subsequent metal deposition n the same electrolyte.All the fabricated diodes showed nearly ideal thermionic emission transport.The Schottky barrier heights were found to be strongly dependent on the metal work function,giving a large value of slope factor of S=0.18-0.55.The result was far away from the recent prediction based on MIGS model.Based on SEM/AFM,XPS and Raman measurements,the result was explained by the DIGS model.