Processing Effects on Schottky Barrier Heights for Three Terminal Transferred Electron Devices.

摘要

The electrical properties of gold and aluminum Schottky barrier contacts have been measured on GaAs as a function of preparation. Current-voltage, capacitance-voltage, and current-temperature measurements have been made to examine the effects of methanol-bromine, sulfuric-hydrogen peroxide-water, and hydrochloric-hydrogen peroxide surface cleaning. Generally, a guard ring approach is used to reduce leakage currents. In this case, no guard ring is used and an attempt has been made to evaluate leakage by the computer evaluation of the equation parameters. Results-to-date indicate that the gold gives a slightly larger barrier height than aluminum, that hydrochloric-peroxide gives the least leakage current, and that under some preparation conditions, the leakage varies with time. (Author)