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机译:理想的Ti / n-GaAs肖特基接触中的势垒高度温度系数
Sueleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, Isparta, Turkey;
rnDepartment of Physics, Faculty of Sciences and Arts, Bingoel University, Bingoel, Turkey;
rnAgri Ibrahim Cecen University, Faculty of Sciences and Arts, Department of Physics, Agri, Turkey;
rnSueleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, Isparta, Turkey;
rnDepartment of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum, Turkey;
rnSueleyman Demirel University, Faculty of Sciences and Arts, Department of Physics, Isparta, Turkey;
schottky diodes; thermionic emission; norde's function; GaAs; barrier height;
机译:Ni / n-GaAs / In肖特基二极管的温度相关理想因子和势垒高度
机译:n-GaAs / Au和n-GaAs / Ag肖特基势垒的电化学形成和性质:表面成分对势垒高度的影响
机译:肖特基势垒高度不均一引起的与理想Pd / InAlN肖特基接触的偏离
机译:在外延磁MNAS / N-GaAs和MNSB / N-GaAs触点中控制肖特基势垒高度
机译:介电偶极子减轻了肖特基势垒高度调整,从而降低了接触电阻。
机译:硼铝双重注入与微波退火相结合对NiSi / Si接触处肖特基势垒高度的调节
机译:低温下au / n-Gaas肖特基二极管势垒高度和理想因子的掺杂依赖性